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LTC1982ES6 DataSheet

LTC1982ES6 DataSheet

Part No.
LTC1982ES6
Part Marking
LTPF
Temperature
–40°C to 85°C
Package
6-LEAD PLASTIC SOT-23
File Size
140 KB
Page
8 Pages
Manufacturer
Linear Technology
Views
2
Upload Time
2022-06-10 12:10:41
Update Time
2022-06-10
Description
IC GATE DRVR HIGH-SIDE SOT23-6
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LTC1982ES6 Features

■ No External Components Required
■ Internal Voltage Triplers Produce High Side Gate Drive for Logic Level FETs
■ Ultralow Power:
 □ 10µA Per Driver ON Current (LTC1982)
 □ <1µA Shutdown Current
■ VCC Range: 1.8V to 5V
■ Gate Drive Outputs Driven to Ground During Shutdown
■ Gate Drive Outputs Internally Clamped to 7.5V Max
■ “Gate Drive Ready” Output (LTC1981)
■ Ultrasmall Application Circuit
■ 6-Pin SOT-23 Package (LTC1982)

LTC1982ES6 Applications

■ Cellular Telephones
■ Portable POS Terminal
■ Handheld Battery Powered Equipment

LTC1982ES6 Description

The LTC1982ES6 are low-power, self-contained N-channel MOSFET drivers. An internal voltage tripler allows gates to be driven without the use of any external components. Internal regulation circuitry allows quiescent current to drop to 10µA per driver (20µA for LTC1981) once the gates are charged.

Low quiescent current and low shutdown current (under 1µA) make these parts ideal for battery and other power constrained systems. The wide input voltage range accommodates a variety of battery/input configurations.

Gate drive is internally clamped to 7.5V providing protection to the external MOSFET gate. The MOSFETs can be driven in either high side or low side mode.

The LTC1981 single driver version also includes a gate drive ready pin and twice the drive current capacity of the dual driver LTC1982.

The LTC1982 is available in a 6-pin SOT-23.

Related LTC1982ES6 Datasheet

Part No.
Datasheet
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